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| HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016. Features * 40A, 600V at TC = 25oC * Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC * Short Circuit Rated * Low Conduction Loss * Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG20N60B3D PACKAGE TO-247 BRAND G20N60B3D COLLECTOR (BOTTOM SIDE METAL) NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B HGTG20N60B3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60B3D Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector to Gate Voltage, RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 600 600 40 20 20 160 20 30 30A at 600V 165 1.32 -40 to 150 260 4 10 W W/oC oC oC UNITS V V A A A A V V s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360V, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES IC = IC110 , VGE = 15V VGE = 20V TC = 150oC VGE = 15V, RG = 10, L = 45H IC = IC110, VCE = 0.5 BVCES TC = 150oC, ICE = IC110 VCE = 0.8 BVCES, VGE = 15V RG = 10, L = 100H IEC = 20A IEC = 20A, dIEC/dt = 100A/s IEC = 1A, dIEC/dt = 100A/s IGBT Diode VCE = 480V VCE = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.0 100 30 TYP 1.8 2.1 5.0 MAX 250 2.0 2.0 2.5 6.0 100 UNITS V A mA V V V nA A A Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA IC = 250A, VCE = VGE Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time Thermal Resistance NOTE: VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON EOFF VEC trr RJC IC = IC110 , VCE = 0.5 BVCES VGE = 15V VGE = 20V - 8.0 80 105 25 20 220 140 475 1050 1.5 - 105 135 275 175 1.9 55 45 0.76 1.2 V nC nC ns ns ns ns J J V ns ns oC/W oC/W 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. (c)2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B HGTG20N60B3D Typical Performance Curves ICE , COLLECTOR TO EMITTER CURRENT (A) 100 PULSE DURATION = 250s DUTY CYCLE <0.5%, VCE = 10V 80 TC = 150oC 60 TC = 25oC 40 TC = -40oC TC = -40oC 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 100 VGE = 15V 80 12V VGE = 10V PULSE DURATION = 250s DUTY CYCLE <0.5%, TC = 25oC VGE = 9V 60 VGE = 8.5V 40 VGE = 8.0V 20 VGE = 7.5V VGE = 7.0V 0 0 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 0 4 6 8 10 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 2. SATURATION CHARACTERISTICS 50 ICE , DC COLLECTOR CURRENT (A) 100 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V 80 TC = 25oC 40 VGE = 15V 30 60 TC = -40oC 20 40 TC = 150oC 10 20 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE 5000 FREQUENCY = 1MHz 4000 CIES FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE VCE , COLLECTOR TO EMITTER VOLTAGE (V) 600 15 VGE , GATE TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 480 VCE = 600V 360 VCE = 400V VCE = 200V 120 TC = 25oC Ig(REF) = 1.685mA RL = 30 0 20 40 60 QG , GATE CHARGE (nC) 80 12 3000 9 2000 COES 1000 CRES 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 240 6 3 0 0 100 FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 6. GATE CHARGE WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B HGTG20N60B3D Typical Performance Curves 100 td(ON)I , TURN-ON DELAY TIME (ns) TJ = 150oC, RG = 10, L = 100H (Continued) 500 td(OFF)I , TURN-OFF DELAY TIME (ns) 400 TJ = 150oC, RG = 10, L = 100H 50 40 30 VCE = 480V, VGE = 15V 20 300 VCE = 480V, VGE = 15V 200 10 0 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 40 100 0 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 40 FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURREN T FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 100 trI , TURN-ON RISE TIME (ns) TJ = 150oC, RG = 10, L = 100H 1000 TJ = 150oC, RG = 10, L = 100H VCE = 480V, VGE = 15V 10 tfI , FALL TIME (ns) 100 VCE = 480V, VGE = 15V 1 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 0 10 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 1400 EON , TURN-ON ENERGY LOSS (J) 1200 1000 800 600 400 200 0 0 EOFF, TURN-OFF ENERGY LOSS (J) TJ = 150oC, RG = 10, L = 100H 2500 TJ = 150oC, RG = 10, L = 100H 2000 1500 VCE = 480V, VGE = 15V 1000 VCE = 480V, VGE = 15V 500 0 10 20 30 40 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 20 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 40 FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B HGTG20N60B3D Typical Performance Curves 500 fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, TC = 75oC, VGE = 15V RG = 10, L = 100mH VCE = 480V 100 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON +EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.76oC/W 5 10 20 30 40 (Continued) ICE , COLLECTOR TO EMITTER CURRENT (A) 120 TC = 150oC, VGE = 15V, RG = 10 100 80 60 40 20 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURREN T FIGURE 14. SWITCHING SAFE OPERATING AREA 100 ZJC , NORMALIZED THERMAL 0.5 0.2 RESPONSE 10-1 0.1 0.05 0.02 PD 0.01 t1 10-2 t2 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-4 10-3 10-2 10-1 100 101 10-3 10-5 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 100 IEC , FORWARD CURRENT (A) 50 TC = 25oC, dI EC/dt = 100A/s trr 150oC 60 100oC 40 25oC tr, RECOVERY TIMES (ns) 80 40 30 ta 20 tb 10 20 0 0 0.5 1.0 1.5 2.0 2.5 VEC , FORWARD VOLTAGE (V) 0 1 5 10 IEC , FORWARD CURRENT (A) 20 FIGURE 16. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 17. RECOVERY TIMES vs FORWARD CURRENT (c)2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B HGTG20N60B3D Test Circuit and Waveform L = 100H RHRP3060 VGE EOFF RG = 10 + VCE 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I 90% 10% EON - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and discharge procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF ; i.e. the collector current equals zero (ICE = 0). (c)2001 Fairchild Semiconductor Corporation HGTG20N60B3D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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